| Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ... Japanese Journal of Applied Physics 56 (3), 031001, 2017 | 103 | 2017 |
| Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo Japanese Journal of Applied Physics 59 (SG), SGGD02, 2020 | 67 | 2020 |
| Planar or Perpendicular? Conformational Preferences of π‐Conjugated Metalloporphyrin Dimers and Trimers in Supramolecular Tubular Arrays A Tsuda, H Hu, R Tanaka, T Aida Angewandte Chemie International Edition 44 (31), 4884-4888, 2005 | 57 | 2005 |
| Solution growth of high-quality 3C-SiC crystals T Ujihara, R Maekawa, R Tanaka, K Sasaki, K Kuroda, Y Takeda Journal of Crystal Growth 310 (7-9), 1438-1442, 2008 | 55 | 2008 |
| Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo, K Nakagawa Applied Physics Express 12 (5), 054001, 2019 | 42 | 2019 |
| Demonstration of GaN static induction transistor (SIT) using self-aligned process W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017 | 34 | 2017 |
| Combustion characteristics of a heat-recirculating ceramic burner using a low-calorific-fuel R Tanaka, M Shinoda, N Arai Energy Conversion and Management 42 (15-17), 1897-1907, 2001 | 34 | 2001 |
| Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono Journal of Applied Physics 126 (23), 2019 | 27 | 2019 |
| High-quality and large-area 3C–SiC growth on 6H–SiC (0 0 0 1) seed crystal with top-seeded solution method T Ujihara, K Seki, R Tanaka, S Kozawa, K Morimoto, K Sasaki, Y Takeda Journal of crystal growth 318 (1), 389-393, 2011 | 22 | 2011 |
| Influence of implanted Mg concentration on defects and Mg distribution in GaN A Kumar, W Yi, J Uzuhashi, T Ohkubo, J Chen, T Sekiguchi, R Tanaka, ... Journal of Applied Physics 128 (6), 2020 | 20 | 2020 |
| Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam A Uedono, R Tanaka, S Takashima, K Ueno, M Edo, K Shima, K Kojima, ... Scientific reports 11 (1), 20660, 2021 | 16 | 2021 |
| Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg K Shima, R Tanaka, S Takashima, K Ueno, M Edo, K Kojima, A Uedono, ... Applied Physics Letters 119 (18), 2021 | 15 | 2021 |
| Mg diffusion and activation along threading dislocations in GaN W Yi, A Kumar, J Uzuhashi, T Kimura, R Tanaka, S Takashima, M Edo, ... Applied Physics Letters 116 (24), 2020 | 15 | 2020 |
| Optimization of heat transfer performances of a heat-recirculating ceramic burner during methane/air and low-calorific-fuel/air combustion M Shinoda, R Tanaka, N Arai Energy conversion and management 43 (9-12), 1479-1491, 2002 | 14 | 2002 |
| Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing J Uzuhashi, J Chen, A Kumar, W Yi, T Ohkubo, R Tanaka, S Takashima, ... Journal of Applied Physics 131 (18), 2022 | 10 | 2022 |
| Generation of field-emitting surface dielectric barrier discharges in Ar and N2 M Kanno, R Tanaka, S Stauss, T Ito, K Terashima AIP Advances 9 (5), 2019 | 7 | 2019 |
| Method for producing a semiconductor device, and semiconductor device S Takashima, R Tanaka, K Ueno, M Edo US Patent 9,754,783, 2017 | 7 | 2017 |
| Method for producing a semiconductor device, and semiconductor device produced thereby R Tanaka, S Takashima, K Ueno, M Edo US Patent App. 14/848,889, 2015 | 7 | 2015 |
| Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes K Shiojima, R Tanaka, S Takashima, K Ueno, M Edo Japanese Journal of Applied Physics 60 (5), 056503, 2021 | 5 | 2021 |
| The geometry of the chromosphere-corona transition region inferred from the center-to-limb variation of the radio emission M Kanno, R Tanaka Solar Physics 43, 63-77, 1975 | 5 | 1975 |
Shinya TakashimaFuji Electric Co., Ltd.Verified email at fujielectric.com
