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Weig T
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Blue superluminescent light-emitting diodes with output power above 100 mW for picoprojection
F Kopp, C Eichler, A Lell, S Tautz, J Ristić, B Stojetz, C Höß, T Weig, ...
Japanese Journal of Applied Physics 52 (8S), 08JH07, 2013
442013
Longitudinal mode competition and mode clustering in (Al, In) GaN laser diodes
T Weig, T Hager, G Brüderl, U Strauss, UT Schwarz
Optics Express 22 (22), 27489-27503, 2014
412014
Anisotropic optical conductivity of the putative Kondo insulator CeRu Sn
V Guritanu, P Wissgott, T Weig, H Winkler, J Sichelschmidt, M Scheffler, ...
arXiv preprint arXiv:1209.2942, 2012
372012
Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence
M Meneghini, S Carraro, G Meneghesso, N Trivellin, G Mura, F Rossi, ...
Applied Physics Letters 103 (23), 2013
272013
Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers
PP Vasil'ev, AB Sergeev, IV Smetanin, T Weig, UT Schwarz, L Sulmoni, ...
Applied Physics Letters 102 (12), 2013
162013
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
C De Santi, M Meneghini, M Marioli, M Buffolo, N Trivellin, T Weig, K Holc, ...
Microelectronics Reliability 54 (9-10), 2147-2150, 2014
152014
Picosecond pulse generation in monolithic GaN-based multi-section laser diodes
K Holc, T Weig, W Pletschen, K Köhler, J Wagner, UT Schwarz
Gallium Nitride Materials and Devices VIII 8625, 184-191, 2013
142013
Terahertz Conductivity of the Heavy-Fermion State in CeCoIn5
M Scheffler, T Weig, M Dressel, H Shishido, Y Mizukami, T Terashima, ...
Journal of the Physical Society of Japan 82 (4), 043712, 2013
132013
Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
L Redaelli, H Wenzel, J Piprek, T Weig, S Einfeldt, M Martens, G Lükens, ...
IEEE Journal of Quantum Electronics 51 (8), 1-6, 2015
122015
Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias
K Holc, T Weig, K Köhler, J Wagner, UT Schwarz
Applied Physics Express 6 (8), 084101, 2013
122013
Superluminescent light emitting diodes of 100mW output power for pico-projection
UT Schwarz, F Kopp, T Weig, C Eichler, U Strauss
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 1-2, 2013
92013
Implementation and investigation of mode locking in GaN‐based laser diodes in external cavity configuration
T Weig, H Höck, K Holc, K Köhler, J Wagner, UT Schwarz
physica status solidi (a) 212 (5), 986-991, 2015
82015
Gallium nitride laser diodes with integrated absorber: on the dynamics of self‐pulsation
K Holc, G Lükens, T Weig, K Köhler, J Wagner, UT Schwarz
physica status solidi (c) 11 (3‐4), 670-673, 2014
82014
Superfluorescent emission in electrically pumped semiconductor laser
DL Boiko, X Zeng, T Stadelmann, S Grossmann, A Hoogerwerf, T Weig, ...
arXiv preprint arXiv:1302.0263, 2013
82013
Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes
K Holc, A Jakob, T Weig, K Köhler, O Ambacher, UT Schwarz
Novel In-Plane Semiconductor Lasers XIII 9002, 53-61, 2014
62014
Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
T Weig, G Lükens, K Holc, K Köhler, J Wagner, UT Schwarz
Novel In-Plane Semiconductor Lasers XIII 9002, 62-71, 2014
52014
Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
T Weig, UT Schwarz, L Sulmoni, JM Lamy, JF Carlin, N Grandjean, ...
Novel In-Plane Semiconductor Lasers XII 8640, 69-77, 2013
42013
Generation of optical ultra–short pulses in (Al, In) GaN laser diodes
T Weig
Dissertation, Universität Freiburg, 2015, 2015
32015
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
L Redaelli, H Wenzel, T Weig, G Lükens, S Einfeldt, UT Schwarz, ...
CLEO: Science and Innovations, CF1F. 3, 2013
12013
Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress
M Meneghini, S Carraro, G Meneghesso, N Trivellin, G Mura, F Rossi, ...
Gallium Nitride Materials and Devices IX 8986, 210-216, 2014
2014
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