| Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges. R Waser, R Dittmann, G Staikov, K Szot Advanced Materials (Deerfield Beach, Fla.) 21 (25-26), 2632-2663, 2009 | 5635 | 2009 |
| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 462 | 2022 |
| Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices R Muenstermann, T Menke, R Dittmann, R Waser Adv. Mater 22 (43), 4819-4822, 2010 | 416 | 2010 |
| In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure GS Park, YB Kim, SY Park, XS Li, S Heo, MJ Lee, M Chang, JH Kwon, ... Nature communications 4 (1), 2382, 2013 | 404 | 2013 |
| Origin of the ultra‐nonlinear switching kinetics in oxide‐based resistive switches S Menzel, M Waters, A Marchewka, U Böttger, R Dittmann, R Waser Advanced Functional Materials 21 (23), 4487-4492, 2011 | 393 | 2011 |
| Towards oxide electronics: a roadmap M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ... Applied surface science 482, 1-93, 2019 | 317 | 2019 |
| Impact of defect distribution on resistive switching characteristics of Sr2TiO4 thin films K Shibuya, R Dittmann, S Mi, R Waser Advanced materials 22 (3), 411-414, 2010 | 267 | 2010 |
| Nanoscale resistive switching in SrTiO3 thin films K Szot, R Dittmann, W Speier, R Waser physica status solidi (RRL)–Rapid Research Letters 1 (2), R86-R88, 2007 | 211 | 2007 |
| Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ... Advanced materials 29 (23), 1700212, 2017 | 207 | 2017 |
| Identification of - and -Site Cation Vacancy Defects in Perovskite Oxide Thin Films DJ Keeble, S Wicklein, R Dittmann, L Ravelli, RA Mackie, W Egger Physical review letters 105 (22), 226102, 2010 | 199 | 2010 |
| Resistive switching and data reliability of epitaxial (Ba, Sr) TiO3 thin films R Oligschlaeger, R Waser, R Meyer, S Karthäuser, R Dittmann Applied Physics Letters 88 (4), 2006 | 183 | 2006 |
| Staikov and Szot Kristof 2009 R Waser, R Dittmann Adv. Mater 21, 2632, 0 | 160 | |
| Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO 3? V Metlenko, AHH Ramadan, F Gunkel, H Du, H Schraknepper, ... Nanoscale 6 (21), 12864-12876, 2014 | 155 | 2014 |
| Spectromicroscopic insights for rational design of redox-based memristive devices C Baeumer, C Schmitz, AHH Ramadan, H Du, K Skaja, V Feyer, P Müller, ... Nature communications 6 (1), 8610, 2015 | 149 | 2015 |
| Improved endurance behavior of resistive switching in (Ba, Sr) TiO3 thin films with W top electrode W Shen, R Dittmann, U Breuer, R Waser Applied physics letters 93 (22), 2008 | 145 | 2008 |
| Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry S Wicklein, A Sambri, S Amoruso, X Wang, R Bruzzese, A Koehl, ... Applied physics letters 101 (13), 2012 | 144 | 2012 |
| Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis C Baeumer, J Li, Q Lu, AYL Liang, L Jin, HP Martins, T Duchoň, M Glöß, ... Nature materials 20 (5), 674-682, 2021 | 136 | 2021 |
| Nanoionic memristive phenomena in metal oxides: the valence change mechanism R Dittmann, S Menzel, R Waser Advances in Physics 70 (2), 155-349, 2021 | 126 | 2021 |
| Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3 T Menke, P Meuffels, R Dittmann, K Szot, R Waser Journal of applied physics 105 (6), 2009 | 126 | 2009 |
| Subfilamentary networks cause cycle-to-cycle variability in memristive devices C Baeumer, R Valenta, C Schmitz, A Locatelli, TO Mentes, SP Rogers, ... ACS nano 11 (7), 6921-6929, 2017 | 123 | 2017 |
