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John A. Ott
John A. Ott
Research Engineer, IBM
Verified email at us.ibm.com
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High performance CMOS fabricated on hybrid substrate with different crystal orientations
M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ...
IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003
3762003
Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs
K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
3672002
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 1-7, 2014
3402014
Strained Si NMOSFETs for high performance CMOS technology
K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ...
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001
3152001
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
AW Topol, DC La Tulipe, L Shi, SM Alam, DJ Frank, SE Steen, J Vichiconti, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
3032005
High speed composite p-channel Si/SiGe heterostructure for field effect devices
JO Chu, R Hammond, KEE Ismail, SJ Koester, PM Mooney, JA Ott
US Patent 6,350,993, 2002
2722002
High performance strained silicon FinFETs device and method for forming same
SW Bedell, KK Chan, D Chidambarrao, SH Christianson, JO Chu, ...
US Patent 7,705,345, 2010
2442010
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources
Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
2392010
Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
K Rim, K Chan, L Shi, D Boyd, J Ott, N Klymko, F Cardone, L Tai, ...
IEEE International Electron Devices Meeting 2003, 3.1. 1-3.1. 4, 2003
2372003
Electrical characterization of germanium p-channel MOSFETs
H Shang, H Okorn-Schimdt, J Ott, P Kozlowski, S Steen, EC Jones, ...
IEEE Electron Device Letters 24 (4), 242-244, 2003
2142003
Hybrid-orientation technology (HOT): Opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
2122006
High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length
MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
1992010
Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies
SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ...
IEEE Journal of Photovoltaics 2 (2), 141-147, 2012
1952012
Bulk and strained silicon on insulator using local selective oxidation
JO Chu, KEE Ismail, KY Lee, JA Ott
US Patent 5,963,817, 1999
1851999
Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
J de Souza, J Ott, A Reznicek, K Saenger
US Patent App. 10/725,850, 2005
1752005
Bulk and strained silicon on insulator using local selective oxidation
JO Chu, KEE Ismail, KY Lee, JA Ott
US Patent 6,251,751, 2001
1712001
Hafnium oxide gate dielectrics on sulfur-passivated germanium
MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ...
Applied physics letters 89 (11), 112905, 2006
1702006
Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
DF Canaperi, JO Chu, PD Christopher, L Huang, JA Ott, HSP Wong
US Patent 6,524,935, 2003
1492003
High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
H Shang, H Okorn-Schmidt, KK Chan, M Copel, JA Ott, PM Kozlowski, ...
Digest. International Electron Devices Meeting,, 441-444, 2002
1462002
Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
C Dimitrakopoulos, YM Lin, A Grill, DB Farmer, M Freitag, Y Sun, SJ Han, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
1362010
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