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Man Hoi Wong
Man Hoi Wong
Verified email at ust.hk
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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
M Higashiwaki, K Sasaki, T Kamimura, MH Wong, D Krishnamurthy, ...
Applied Physics Letters 103 (12), 123511, 2013
5952013
Field-Plated Ga< sub> 2</sub> O< sub> 3</sub> MOSFETs With a Breakdown Voltage of Over 750 V
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Electron Device Letters, IEEE 37 (2), 212-215, 2016
454*2016
How to make ohmic contacts to organic semiconductors
Y Shen, AR Hosseini, MH Wong, GG Malliaras
ChemPhysChem 5 (1), 16-25, 2004
3852004
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors
S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 044501, 2007
2512007
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, Nidhi, S Dasgupta, DJ Denninghoff, S Kolluri, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
1942013
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
T Kamimura, K Sasaki, MH Wong, D Krishnamurthy, A Kuramata, T Masui, ...
Applied Physics Letters 104 (19), 192104, 2014
1782014
CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion
S Chowdhury, MH Wong, BL Swenson, UK Mishra
Electron Device Letters, IEEE 33 (1), 41-43, 2012
1632012
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
S Chowdhury, BL Swenson, MH Wong, UK Mishra
Semiconductor Science and Technology 28 (7), 074014, 2013
1622013
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
MH Wong, Y Nakata, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Express 10 (4), 041101, 2017
1412017
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
MH Wong, CH Lin, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, ...
Applied Physics Letters 113 (10), 102103, 2018
1292018
Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping
MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki
IEEE Electron Device Letters 40 (3), 431-434, 2019
1272019
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ...
IEEE Electron Device Letters 40 (9), 1487-1490, 2019
1062019
Growth and electrical characterization of N-face AlGaN/GaN heterostructures
S Rajan, M Wong, Y Fu, F Wu, JS Speck, UK Mishra
Japanese journal of applied physics 44 (11L), L1478, 2005
1052005
Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil
MH Wong, A Berenov, X Qi, MJ Kappers, ZH Barber, B Illy, Z Lockman, ...
Nanotechnology 14 (9), 968, 2003
942003
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Japanese Journal of Applied Physics 55 (12), 1202B9, 2016
932016
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ...
Applied Physics Letters 99 (22), 223501, 2011
932011
Charge transport in doped organic semiconductors
Y Shen, K Diest, MH Wong, BR Hsieh, DH Dunlap, GG Malliaras
Physical Review B 68 (8), 081204, 2003
892003
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Letters 109 (19), 193503, 2016
882016
Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
MH Wong, Y Pei, T Palacios, L Shen, A Chakraborty, LS McCarthy, ...
Applied Physics Letters 91 (23), 232103-232103-3, 2007
852007
Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Letters 106 (3), 032105, 2015
842015
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