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Ashwani Kumar
Ashwani Kumar
Adresse e-mail validée de sheffield.ac.uk - Page d'accueil
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
10602018
Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors
P Balakrishna Pillai, A Kumar, X Song, MM De Souza
ACS applied materials & interfaces 10 (11), 9782-9791, 2018
582018
Negative Capacitance beyond ferroelectric switches
A Kumar, P Balakrishna Pillai, X Song, MM De Souza
ACS applied materials & interfaces 10 (23), 19812-19819, 2018
242018
Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance
A Kumar, V Kumar, S Agarwal, A Basak, N Jain, A Bulusu, SK Manhas
Nanotechnology, IEEE Transactions on 13 (1), 16-22, 2014
162014
Ordinal Pooling Networks: For Preserving Information over Shrinking Feature Maps
A Kumar
arXiv preprint arXiv:1804.02702, 2018
132018
Ordinal Pooling
A Deliège, M Istasse, A Kumar, C De Vleeschouwer, ...
30th British Machine Vision Conference, 2019
122019
A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio
A Kumar, MMD Souza
IEEE Transactions on Electron Devices, 2019
122019
Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors
A Kumar, MM De Souza
IET Power Electronics 11 (4), 675-680, 2018
122018
Extending the bounds of performance in E-mode p-channel GaN MOSHFETs
A Kumar, MM De Souza
2016 IEEE International Electron Devices Meeting (IEDM), 7.4. 1-7.4. 4, 2016
102016
An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC
A Kumar, MM De Souza
IEEE Electron Device Letters 38 (10), 1449-1452, 2017
82017
Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN
A Kumar, MM De Souza
Applied Physics Letters 112 (15), 2018
72018
On the Dynamic characteristics of Ferroelectric and Paraelectric FETs
A Kumar, MM De Souza
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018
72018
Off-state operation of a three terminal ionic FET for logic-in-memory
X Song, A Kumar, MM De Souza
IEEE Journal of the Electron Devices Society 7, 1232-1238, 2019
42019
Reservoir Computing Based on a Solid Electrolyte ZnO TFT: An Attractive Platform for Flexible Edge Computing
X Song, A Gaurav, PB Pillai, A Kumar, S Manhas, A Gilra, E Vasilaki, ...
2023 IEEE International Flexible Electronics Technology Conference (IFETC), 1-3, 2023
12023
An ultra-low power 3-terminal memory device with write capability in the off-state
X Song, A Kumar, MM De Souza
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 154-156, 2019
12019
A delay system reservoir based on a nano-ionic Solid Electrolyte FET*
MM De Souza, X Song, A Gaurav, SK Manhas, PB Pillai, S Sikdar, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 139-140, 2023
2023
Necessary conditions for steep switching in a constant Resistor-Capacitor RCFET
A Kumar, X Song, MM De Souza
MRS Advances 6, 540-545, 2021
2021
A Ta2O5/ZnO Synaptic SE-FET for supervised learning in a crossbar
X Song, A Kumar, MM De Souza
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
2021
Novel Approaches to Power Efficient GaN and Negative Capacitance Devices
A Kumar
University of Sheffield, 2018
2018
Solid electrolyte transistors: mechanisms and applications
M De Souza, PB Pillai, A Kumar, X Song
Abstract Book TCM 2018, 100, 2018
2018
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