| Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN C Koller, G Pobegen, C Ostermaier, D Pogany IEEE Transactions on Electron Devices 65 (12), 5314-5321, 2018 | 51 | 2018 |
| The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers C Koller, G Pobegen, C Ostermaier, M Huber, D Pogany Applied Physics Letters 111 (3), 2017 | 40 | 2017 |
| Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamics C Koller, G Pobegen, C Ostermaier, D Pogany 2017 IEEE International Electron Devices Meeting (IEDM), 33.4. 1-33.4. 4, 2017 | 22 | 2017 |
| Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination C Koller,C. and Lymperakis,L. and Pogany,D. and Pobegen,G. and Ostermaier Journal of Applied Physics 130 (18), 185702, 2021 | 17 | 2021 |
| Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes A Nardo, C De Santi, C Koller, C Ostermaier, I Daumiller, G Meneghesso, ... Microelectronics Reliability 126, 114255, 2021 | 10 | 2021 |
| Drain field plate impact on the hard-switching performance of AlGaN/GaN HEMTs A Minetto, N Modolo, L Sayadi, C Koller, C Ostermaier, M Meneghini, ... IEEE Transactions on Electron Devices 68 (10), 5003-5008, 2021 | 10 | 2021 |
| Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN C Koller, G Pobegen, C Ostermaier, G Hecke, R Neumann, M Holzbauer, ... physica status solidi (b) 256 (6), 1800527, 2019 | 10 | 2019 |
| Method to distinguish between buffer and surface trapping in stressed normally-ON GaN GITs using the gate-voltage dependence of recovery time constants B Butej, V Padovan, D Pogany, G Pobegen, C Ostermaier, C Koller IEEE Transactions on Electron Devices 69 (6), 3087-3093, 2022 | 7 | 2022 |
| Reliability issues in GaN electronic devices M Ťapajna, C Koller Nitride Semiconductor Technology: Power Electronics and optoelectronic …, 2020 | 6 | 2020 |
| Stress and recovery dynamics of drain current in GaN HD-GITs submitted to DC semi-ON stress V Padovan, C Koller, G Pobegen, C Ostermaier, D Pogany Microelectronics Reliability 100, 113482, 2019 | 5 | 2019 |
| Charge Trapping in GaN Power Transistors: Challenges and Perspectives M Meneghini, N Modolo, A Nardo, C De Santi, A Minetto, L Sayadi, ... 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 4 | 2021 |
| Investigation of surface oxidation of III-N materials by AES C Koller | 1 | 2015 |
| Relevance of Threading Dislocations for the Thermal Oxidation of GaN (0001) M Reiner, C Koller, K Pekoll, R Pietschnig, C Ostermaier MRS Online Proceedings Library (OPL) 1792, mrss15-2133138, 2015 | 1 | 2015 |
| The Role of Carbon in creating insulating behavior in GaN-on-Si buffers: a physical model C Koller Technische Universität Wien, 2018 | | 2018 |
