| Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection A Nishikawa, T Kawasaki, N Furukawa, Y Terai, Y Fujiwara Applied Physics Express 2 (7), 071004, 2009 | 270 | 2009 |
| Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy A Nishikawa, N Furukawa, T Kawasaki, Y Terai, Y Fujiwara Applied Physics Letters 97 (5), 2010 | 103 | 2010 |
| Eu luminescence center created by Mg codoping in Eu-doped GaN D Lee, A Nishikawa, Y Terai, Y Fujiwara Applied Physics Letters 100 (17), 2012 | 75 | 2012 |
| Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers N Woodward, A Nishikawa, Y Fujiwara, V Dierolf Optical Materials 33 (7), 1050-1054, 2011 | 60 | 2011 |
| Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center N Woodward, J Poplawsky, B Mitchell, A Nishikawa, Y Fujiwara, V Dierolf Applied Physics Letters 98 (1), 2011 | 56 | 2011 |
| Effect of nitrogen on the optical and transport properties of Ga0. 48In0. 52NyP1− y grown on GaAs (001) substrates YG Hong, A Nishikawa, CW Tu Applied physics letters 83 (26), 5446-5448, 2003 | 47 | 2003 |
| Lattice site location of optical centers in GaN: Eu light emitting diode material grown by organometallic vapor phase epitaxy K Lorenz, E Alves, IS Roqan, KP O’Donnell, A Nishikawa, Y Fujiwara, ... Applied Physics Letters 97 (11), 2010 | 45 | 2010 |
| High critical electric field exceeding 8 MV/cm measured using an AlGaN p–i–n vertical conducting diode on n-SiC substrate A Nishikawa, K Kumakura, T Makimoto Japanese journal of applied physics 46 (4S), 2316, 2007 | 43 | 2007 |
| High critical electric field of AlxGa1− xN pin vertical conducting diodes on n-SiC substrates A Nishikawa, K Kumakura, T Akasaka, T Makimoto Applied physics letters 88 (17), 2006 | 41 | 2006 |
| Growth and characterization of InAsN alloy films and quantum wells M Kuroda, A Nishikawa, R Katayama, K Onabe Journal of crystal growth 278 (1-4), 254-258, 2005 | 36 | 2005 |
| Electroluminescence properties of Eu‐doped GaN‐based red light‐emitting diode by OMVPE A Nishikawa, T Kawasaki, N Furukawa, Y Terai, Y Fujiwara physica status solidi (a) 207 (6), 1397-1399, 2010 | 32 | 2010 |
| MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1) A Nishikawa, R Katayama, K Onabe, Y Shiraki Journal of crystal growth 251 (1-4), 427-431, 2003 | 29 | 2003 |
| Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy A Nishikawa, N Furukawa, T Kawasaki, Y Terai, Y Fujiwara Optical Materials 33 (7), 1071-1074, 2011 | 28 | 2011 |
| Temperature dependence of optical properties of quantum dots grown on GaAs (001) A Nishikawa, YG Hong, CW Tu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 19 | 2004 |
| Atmospheric pressure growth of Eu‐doped GaN by organometallic vapor phase epitaxy N Furukawa, A Nishikawa, T Kawasaki, Y Terai, Y Fujiwara physica status solidi (a) 208 (2), 445-448, 2011 | 17 | 2011 |
| Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy A Nishikawa, N Furukawa, D Lee, K Kawabata, T Matsuno, Y Terai, ... MRS Online Proceedings Library 1342, 27-32, 2011 | 14 | 2011 |
| Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates A Nishikawa, K Kumakura, T Akasaka, T Makimoto Superlattices and Microstructures 40 (4-6), 332-337, 2006 | 14 | 2006 |
| RF-MBE growth of InAsN layers on GaAs (0 0 1) substrates using a thick InAs buffer layer S Nishio, A Nishikawa, R Katayama, K Onabe, Y Shiraki Journal of crystal growth 251 (1-4), 422-426, 2003 | 13 | 2003 |
| Growth and optical characterization of InAsN quantum dots H Tsurusawa, A Nishikawa, R Katayama, K Onabe physica status solidi (b) 243 (7), 1657-1660, 2006 | 12 | 2006 |
| 200-mm GaN-on-Si based blue light-emitting diode wafer with high emission uniformity A Nishikawa, L Groh, W Solari, S Lutgen Japanese Journal of Applied Physics 52 (8S), 08JB25, 2013 | 11 | 2013 |
