| Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs A Alian, S El Kazzi, A Verhulst, A Milenin, N Pinna, T Ivanov, D Lin, ... 2018 IEEE Symposium on VLSI Technology, 133-134, 2018 | 22 | 2018 |
| Alternative metals: from ab initio screening to calibrated narrow line models C Adelmann, K Sankaran, S Dutta, A Gupta, S Kundu, G Jamieson, ... 2018 IEEE International Interconnect Technology Conference (IITC), 154-156, 2018 | 20 | 2018 |
| Record performance Top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets S Ramesh, T Ivanov, V Putcha, A Alian, A Sibaja-Hernandez, ... 2017 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2017 | 20 | 2017 |
| IEEE International Interconnect Technology Conference (IITC) C Adelmann, K Sankaran, S Dutta, A Gupta, S Kundu, G Jamieson, ... IEEE, 2018 | 12 | 2018 |
| Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling S Ramesh, T Ivanov, A Sibaja-Hernandez, A Alian, E Camerotto, ... Journal of Applied Physics 132 (2), 2022 | 3 | 2022 |
| Tuning of electrical properties in few layer CVD MoS2 through reduction of ambient exposure A Leonhardt, D Chiappe, I Asselberghs, N Pinna, A Dabral, A Nalin Mehta, ... E-MRS Fall Meeting, Date: 2017/01/01-2017/01/09, Location: Warsaw Poland, 2017 | | 2017 |
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