| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2018 | 414 | 2018 |
| Voids in silicon by He implantation: From basic to applications V Raineri, M Saggio, E Rimini Journal of Materials Research 15 (7), 1449-1477, 2000 | 184 | 2000 |
| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 173 | 2014 |
| Challenges for energy efficient wide band gap semiconductor power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ... physica status solidi (a) 211 (9), 2063-2071, 2014 | 134 | 2014 |
| Innovative localized lifetime control in high-speed IGBTs M Saggio, V Raineri, R Letor, F Frisina IEEE Electron Device Letters 18 (7), 333-335, 1997 | 111 | 1997 |
| MDmesh/sup TM: innovative technology for high voltage Power MOSFETs M Saggio, D Fagone, S Musumeci 12th International Symposium on Power Semiconductor Devices & ICs …, 2000 | 109 | 2000 |
| Critical issues for interfaces to p-type SiC and GaN in power devices F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ... Applied Surface Science 258 (21), 8324-8333, 2012 | 73 | 2012 |
| Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors P Fiorenza, A Frazzetto, A Guarnera, M Saggio, F Roccaforte Applied Physics Letters 105 (14), 2014 | 62 | 2014 |
| Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ... Semiconductor Science and Technology 29 (7), 075018, 2014 | 59 | 2014 |
| Materials issues and device performances for light emitting Er-implanted Si S Coffa, F Priolo, G Franzo, A Polman, S Libertino, M Saggio, A Carnera Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 41* | 1995 |
| Radiation damage and implanted He atom interaction during void formation in silicon V Raineri, M Saggio Applied physics letters 71 (12), 1673-1675, 1997 | 37 | 1997 |
| Mobile telephone H Hosoi, Y Hosoi, M Morimoto, M Tanaka US Patent 10,079,925, 2018 | 35* | 2018 |
| Growth-site-limited crystallization of amorphous silicon JS Custer, A Battaglia, M Saggio, F Priolo Physical review letters 69 (5), 780, 1992 | 35 | 1992 |
| MOS technology power device M Saggio, F Frisina US Patent 6,404,010, 2002 | 31 | 2002 |
| Design and fabrication of integrated Si-based optoelectronic devices S Libertino, S Coffa, M Saggio Materials science in semiconductor processing 3 (5-6), 375-381, 2000 | 28 | 2000 |
| Schottky contacts to silicon carbide: Physics, technology and applications F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, ... Advancing Silicon Carbide Electronics Technology, I: Metal Contacts to …, 2018 | 27 | 2018 |
| Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, ... Materials Science in Semiconductor Processing 97, 62-66, 2019 | 26 | 2019 |
| Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis P Fiorenza, F Iucolano, G Nicotra, C Bongiorno, I Deretzis, A La Magna, ... Nanotechnology 29 (39), 395702, 2018 | 26 | 2018 |
| Method for manufacturing electronic devices in semiconductor substrates provided with gettering sites D Caruso, V Raineri, M Saggio, U Stagnitti US Patent 6,451,672, 2002 | 26 | 2002 |
| A new high voltage power MOSFET for power conversion applications A Galluzzo, M Melito, S Musumeci, M Saggio, A Raciti Conference Record of the 2000 IEEE Industry Applications Conference. Thirty …, 2000 | 24 | 2000 |
