| Nonlinear dispersive modeling of electron devices oriented to GaN power amplifier design A Raffo, V Vadalą, DMMP Schreurs, G Crupi, G Avolio, A Caddemi, ... Microwave Theory and Techniques, IEEE Transactions on 58 (4), 710-718, 2010 | 95 | 2010 |
| Characterization of GaN HEMT low-frequency dispersion through a multiharmonic measurement system A Raffo, S Di Falco, V Vadalą, G Vannini IEEE Transactions on Microwave Theory and Techniques 58 (9), 2490-2496, 2010 | 70 | 2010 |
| Behavioral Modeling of GaN FETs: A Load-Line Approach A Raffo, G Bosi, V Vadalą, G Vannini IEEE, 2014 | 56 | 2014 |
| A Load-Pull Characterization Technique Accounting for Harmonic Tuning V Vadalą, A Raffo, S Di Falco, G Bosi, A Nalli, G Vannini IEEE Transactions on Microwave Theory and Techniques 61 (7), 2695-2704, 2013 | 50 | 2013 |
| X-band GaN power amplifier for future generation SAR systems D Resca, A Raffo, S Di Falco, F Scappaviva, V Vadalą, G Vannini IEEE Microwave and Wireless Components Letters 24 (4), 266-268, 2014 | 38 | 2014 |
| Accurate GaN HEMT nonquasi‐static large‐signal model including dispersive effects G Crupi, A Raffo, DMMP Schreurs, G Avolio, V Vadalą, S Di Falco, ... Microwave and Optical Technology Letters 53 (3), 692-697, 2011 | 33 | 2011 |
| Millimeter-wave FET nonlinear modelling based on the dynamic-bias measurement technique G Avolio, A Raffo, I Angelov, V Vadalą, G Crupi, A Caddemi, G Vannini, ... IEEE Transactions on Microwave Theory and Techniques 62 (11), 2526-2537, 2014 | 17 | 2014 |
| Empowering GaN HEMT models: The gateway for power amplifier design G Crupi, V Vadalą, P Colantonio, E Cipriani, A Caddemi, G Vannini, ... International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017 | 16 | 2017 |
| Nonlinear embedding and de‐embedding techniques for large‐signal fet measurements V Vadalą, G Avolio, A Raffo, DMMP Schreurs, G Vannini Microwave and Optical Technology Letters 54 (12), 2835-2838, 2012 | 16 | 2012 |
| A new approach to class-E power amplifier design A Musio, V Vadalą, F Scappaviva, A Raffo, S Di Falco, G Vannini 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits …, 2011 | 15 | 2011 |
| Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs G Crupi, A Raffo, V Vadalą, G Avolio, DMMP Schreurs, G Vannini, ... IEEE Microwave and Wireless Components Letters 28 (4), 326-328, 2018 | 12 | 2018 |
| On the evaluation of the high-frequency load line in active devices A Raffo, G Avolio, DMMP Schreurs, S Di Falco, V Vadalą, F Scappaviva, ... International Journal of Microwave and Wireless Technologies 3 (1), 19-24, 2011 | 12 | 2011 |
| Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers G Bosi, A Raffo, F Trevisan, V Vadalą, G Crupi, G Vannini IEEE Transactions on Power Electronics 33 (10), 8764-8774, 2018 | 11 | 2018 |
| Nonlinear modeling of LDMOS transistors for high‐power FM transmitters G Bosi, G Crupi, V Vadalą, A Raffo, A Giovannelli, G Vannini International Journal of Numerical Modelling: Electronic Networks, Devices …, 2014 | 11 | 2014 |
| Waveform engineering: State‐of‐the‐art and future trends A Raffo, V Vadalą, G Bosi, F Trevisan, G Avolio, G Vannini International Journal of RF and Microwave Computer‐Aided Engineering 27 (1 …, 2017 | 9 | 2017 |
| “Hybrid” approach to microwave power amplifier design A Raffo, V Vadalà, S Di Falco, F Scappaviva, G Vannini Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 …, 2010 | 9 | 2010 |
| Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors G Avolio, A Raffo, V Vadalą, G Vannini, DMMP Schreurs IEEE Transactions on Microwave Theory and Techniques 64 (11), 3946-3955, 2016 | 8 | 2016 |
| Extremely low-frequency measurements using an active bias tee A Nalli, A Raffo, G Avolio, V Vadalą, G Bosi, DMMP Schreurs, G Vannini 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013 | 8 | 2013 |
| High-periphery GaN HEMT modeling up to 65 GHz and 200° C G Crupi, A Raffo, V Vadalą, G Vannini, A Caddemi Solid-State Electronics 152, 11-16, 2019 | 7 | 2019 |
| A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology G Crupi, A Raffo, V Vadalą, G Vannini, A Caddemi Electronics 7 (12), 353, 2018 | 6 | 2018 |
Giovanni CrupiUniversity of MessinaVerified email at unime.it
