| Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014 | 6606 | 2014 |
| Channel Length Scaling of MoS2 MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012 | 927 | 2012 |
| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 403 | 2018 |
| Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano letters 13 (6), 2640-2646, 2013 | 394 | 2013 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 329 | 2022 |
| Molecular Doping of Multilayer Field-Effect Transistors: Reduction in Sheet and Contact Resistances Y Du, H Liu, AT Neal, M Si, DY Peide IEEE Electron Device Letters 34 (10), 1328-1330, 2013 | 304 | 2013 |
| Switching mechanism in single-layer molybdenum disulfide transistors: An insight into current flow across Schottky barriers H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye ACS nano 8 (1), 1031-1038, 2014 | 291 | 2014 |
| Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 2018 | 288 | 2018 |
| Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 215 | 2017 |
| The effect of dielectric capping on few-layer phosphorene transistors: Tuning the Schottky barrier heights H Liu, AT Neal, M Si, Y Du, DY Peide IEEE Electron Device Letters 35 (7), 795-797, 2014 | 201 | 2014 |
| Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates P Joshi, HE Romero, AT Neal, VK Toutam, SA Tadigadapa Journal of Physics: Condensed Matter 22 (33), 334214, 2010 | 192 | 2010 |
| Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 2016 | 157 | 2016 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 141 | 2019 |
| MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ... Applied Physics Letters 117 (26), 2020 | 131 | 2020 |
| Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen Scientific Reports 7, 13218, 2017 | 127 | 2017 |
| Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor AT Neal, H Liu, J Gu, PD Ye Acs Nano 7 (8), 7077-7082, 2013 | 124 | 2013 |
| Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao physica status solidi (a) 215 (2), 1700467, 2018 | 116 | 2018 |
| 20–80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec JJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye 2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 2012 | 111 | 2012 |
| Phosphorene: a new 2D material with high carrier mobility H Liu, AT Neal, Z Zhu, D Tomanek, PD Ye arXiv preprint arXiv:1401.4133, 2014 | 86 | 2014 |
| Effects of (NH4) 2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors JJ Gu, AT Neal, PD Ye Applied Physics Letters 99 (15), 2011 | 86 | 2011 |
