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Liping Zhang 张立平
Liping Zhang 张立平
Huawei
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Title
Cited by
Cited by
Year
Metal-organic framework ZIF-8 films as low-κ dielectrics in microelectronics
S Eslava, L Zhang, S Esconjauregui, J Yang, K Vanstreels, MR Baklanov, ...
Chemistry of Materials 25 (1), 27-33, 2013
2692013
Method and apparatus for microwave treatment of dielectric films
I Ahmad, M Baklanov, L Zhang
US Patent 9,414,445, 2016
482016
Low damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF4
L Zhang, R Ljazouli, P Lefaucheux, T Tillocher, R Dussart, ...
ECS Journal of Solid State Science and Technology 2 (6), N131, 2013
402013
Damage free cryogenic etching of a porous organosilica ultralow-k film
L Zhang, R Ljazouli, P Lefaucheux, T Tillocher, R Dussart, ...
ECS Solid State Letters 2 (2), N5, 2012
392012
Damage free integration of ultralow-k dielectrics by template replacement approach
L Zhang, JF de Marneffe, N Heylen, G Murdoch, Z Tokei, J Boemmels, ...
Applied Physics Letters 107 (9), 092901, 2015
352015
Improved plasma resistance for porous low-k dielectrics by pore stuffing approach
L Zhang, JF de Marneffe, MH Heyne, S Naumov, Y Sun, A Zotovich, ...
ECS Journal of Solid State Science and Technology 4 (1), N3098, 2014
322014
Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics
JF de Marneffe, L Zhang, M Heyne, M Lukaszewicz, SB Porter, F Vajda, ...
Journal of Applied Physics 118 (13), 133302, 2015
232015
Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation
Z Liping, JF de Marneffe, F Leroy, P Lefaucheux, T Tillocher, R Dussart, ...
21*2016
Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation
L Zhang, JF de Marneffe, F Leroy, P Lefaucheux, T Tillocher, R Dussart, ...
Journal of Physics D: Applied Physics 49 (17), 175203, 2016
212016
Quantitative characterization of pore stuffing and unstuffing for postporosity plasma protection of low-k materials
MH Heyne, L Zhang, J Liu, I Ahmad, D Toma, JF de Marneffe, S De Gendt, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
212014
Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas
F Leroy, L Zhang, T Tillocher, K Yatsuda, K Maekawa, E Nishimura, ...
Journal of Physics D: Applied Physics 48 (43), 435202, 2015
192015
Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above− 50° C
R Chanson, L Zhang, S Naumov, YA Mankelevich, T Tillocher, ...
Scientific reports 8 (1), 1-12, 2018
172018
Surface-confined activation of ultra low-k dielectrics in CO2 plasma
Y Sun, M Krishtab, Y Mankelevich, L Zhang, S De Feyter, M Baklanov, ...
Applied Physics Letters 108 (26), 262902, 2016
112016
Integration of porous low-k dielectrics using post porosity pore protection
L Zhang, JF de Marneffe, P Verdonck, N Heylen, LG Wen, C Wilson, ...
Journal of Physics D: Applied Physics 49 (50), 505105, 2016
102016
Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
Y Sun, E Levrau, L Zhang, J Geypen, J Meersschaut, A Franquet, QT Le, ...
Microelectronic Engineering 137, 70-74, 2015
102015
Stuffing-enabled surface confinement of silanes used as sealing agents on CF 4 plasma-exposed 2.0 p-OSG films
Y Sun, E Levrau, L Zhang, J Geypen, J Meersschaut, A Franquet, QT Le, ...
Microelectronic Engineering 137, 70-74, 2015
102015
Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach
A Zotovich, A Rezvanov, R Chanson, L Zhang, N Hacker, K Kurchikov, ...
Journal of Physics D: Applied Physics 51 (32), 325202, 2018
92018
Pore surface grafting of porous low-k dielectrics by selective polymers
A Rezvanov, L Zhang, M Watanabe, MB Krishtab, L Zhang, N Hacker, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
92017
Cryogenic etching reduces plasma-induced damage of ultralow-k dielectrics
M Baklanov, JF de Marneffe, L Zhang, I Ciofi, Z Tokei
Solid State Technology 57 (5), 2014
72014
Method of etching porous film
S Tahara, E Nishimura, M Baklanov, L Zhang, J De Marneffe
US Patent 9,859,102, 2018
52018
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