Shopan Hafiz
Shopan Hafiz
Verified email at intel.com
Title
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Cited by
Year
InGaN light-emitting diodes: Efficiency-limiting processes at high injection
V Avrutin, S Hafiz, F Zhang, Ü Özgür, H Morkoç, A Matulionis
Journal of Vacuum Science & Technology A 31 (5), 050809, 2013
422013
Metal–Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly
L Nahar, RJA Esteves, S Hafiz, U Özgür, IU Arachchige
ACS nano 9 (10), 9810-9821, 2015
322015
Determination of carrier diffusion length in GaN
S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoc, Ü Özgür, S Metzner, ...
Journal of Applied Physics 117 (1), 013106, 2015
292015
Ultra-small Ge 1-x Sn x quantum dots with visible photoluminescence
RJ Esteves, S Hafiz, DO Demchenko, U Ozgur, IU Arachchige
Chemical Communications 52, 11665, 2016
282016
Energy Gap Tuning and Carrier Dynamics in Colloidal Ge1–x Sn x Quantum Dots
SA Hafiz, RJA Esteves, DO Demchenko, IU Arachchige, U Özgür
The Journal of Physical Chemistry Letters 7, 3295-3301, 2016
232016
The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes
F Zhang, X Li, S Hafiz, S Okur, V Avrutin, Ü Özgür, H Morkoç, A Matulionis
Applied Physics Letters 103 (5), 051122, 2013
232013
Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers
F Zhang, N Can, S Hafiz, M Monavarian, S Das, V Avrutin, Ü Özgür, ...
Applied Physics Letters 106 (18), 181105, 2015
182015
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
X Li, S Okur, F Zhang, SA Hafiz, V Avrutin, Ü Özgür, H Morkoç, ...
Applied Physics Letters 101 (4), 041115, 2012
182012
Saga of efficiency degradation at high injection in InGaN light emitting diodes
V Avrutin, SA Hafiz, F Zhang, Ü Özgür, E Bellotti, F BERTAZZI, M GOANO, ...
Turkish Journal of Physics 38 (3), 269-313, 2014
152014
Optical Transitions and Excitonic Properties of Ge1–xSnx Alloy Quantum Dots
DO Demchenko, V Tallapally, RJA Esteves, S Hafiz, TA Nakagawara, ...
The Journal of Physical Chemistry C 121 (33), 18299-18306, 2017
112017
Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature
MB Ullah, V Avrutin, T Nakagawara, S Hafiz, I Altuntaş, Ü Özgür, ...
Journal of Applied Physics 121 (18), 185704, 2017
72017
GaN-based vertical cavities with all dielectric reflectors by epitaxial lateral overgrowth
S Okur, R Shimada, F Zhang, SDA Hafiz, J Lee, V Avrutin, H Morkoç, ...
Japanese Journal of Applied Physics 52 (8S), 08JH03, 2013
72013
Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy
M Toporkov, MB Ullah, S Hafiz, T Nakagawara, V Avrutin, H Morkoç, ...
Oxide-based Materials and Devices VII 9749, 974910, 2016
52016
Determination of carrier diffusion length in p-and n-type GaN
S Hafiz, S Metzner, F Zhang, M Monavarian, V Avrutin, H Morkoç, ...
Gallium Nitride Materials and Devices IX 8986, 89862C, 2014
52014
Enhancement of coherent acoustic phonons in InGaN multiple quantum wells
SD Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür
Gallium Nitride Materials and Devices X 9363, 93632J, 2015
32015
Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements
S Hafiz, F Zhang, M Monavarian, S Okur, V Avrutin, H Morkoç, Ü Özgür
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2014
32014
Recombination dynamics in non-polar m-plane GaN investigated by time-and polarization-resolved photoluminescence
S Okur, K Jarašiūnas, S Hafiz, J Leach, T Paskova, V Avrutin, H Morkoç, ...
SPIE OPTO, 86252D-86252D-8, 2013
32013
Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers
M Monavarian, S Hafiz, S Das, N Izyumskaya, Ü Özgür, H Morkoç, ...
Gallium Nitride Materials and Devices XI 9748, 974825, 2016
22016
Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
M Monavarian, S Hafiz, N Izyumskaya, S Das, Ü Özgür, H Morkoç, ...
Gallium Nitride Materials and Devices XI 9748, 974827, 2016
22016
Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes
S Hafiz, N Andrade, M Monavarian, N Izyumskaya, S Das, F Zhang, ...
Gallium Nitride Materials and Devices XI 9748, 974828, 2016
12016
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