| Spin-orbit coupling and phase coherence in InAs nanowires SE Hernández, M Akabori, K Sladek, C Volk, S Alagha, H Hardtdegen, ... Physical Review B 82 (23), 235303, 2010 | 122 | 2010 |
| InGaAs nano-pillar array formation on partially masked InP (111) B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application M Akabori, J Takeda, J Motohisa, T Fukui Nanotechnology 14 (10), 1071, 2003 | 100 | 2003 |
| Band-like transport in highly crystalline graphene films from defective graphene oxides R Negishi, M Akabori, T Ito, Y Watanabe, Y Kobayashi Scientific Reports 6 (1), 28936, 2016 | 80 | 2016 |
| MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires K Sladek, V Klinger, J Wensorra, M Akabori, H Hardtdegen, ... Journal of crystal growth 312 (5), 635-640, 2010 | 48 | 2010 |
| Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas M Akabori, K Sladek, H Hardtdegen, T Schäpers, D Grützmacher Journal of crystal growth 311 (15), 3813-3816, 2009 | 45 | 2009 |
| Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures M Akabori, J Takeda, J Motohisa, T Fukui Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 446-450, 2002 | 41 | 2002 |
| Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance C Wei, R Negishi, Y Ogawa, M Akabori, Y Taniyasu, Y Kobayashi Japanese Journal of Applied Physics 58 (SI), SIIB04, 2019 | 38 | 2019 |
| One-pot synthesis of manganese oxide/graphene composites via a plasma-enhanced electrochemical exfoliation process for supercapacitors MN Dang, TH Nguyen, T Van Nguyen, TV Thu, H Le, M Akabori, N Ito, ... Nanotechnology 31 (34), 345401, 2020 | 34 | 2020 |
| Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy P Mohan, F Nakajima, M Akabori, J Motohisa, T Fukui Applied physics letters 83 (4), 689-691, 2003 | 33 | 2003 |
| Application of sputtering-deposited AlN films to gate dielectric for AlGaN/GaN metal–insulator–semiconductor heterojunction field-effect transistor HA Shih, M Kudo, M Akabori, T Suzuki Japanese Journal of Applied Physics 51 (2S), 02BF01, 2012 | 32 | 2012 |
| Spin-splitting analysis of a two-dimensional electron gas in almost strain-free by magnetoresistance measurements M Akabori, VA Guzenko, T Sato, T Schäpers, T Suzuki, S Yamada Physical Review B 77 (20), 205320, 2008 | 29 | 2008 |
| Turbostratic stacking effect in multilayer graphene on the electrical transport properties R Negishi, C Wei, Y Yao, Y Ogawa, M Akabori, Y Kanai, K Matsumoto, ... physica status solidi (b) 257 (2), 1900437, 2020 | 24 | 2020 |
| Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates H Takita, N Hashimoto, CT Nguyen, M Kudo, M Akabori, T Suzuki Applied Physics Letters 97 (1), 2010 | 23 | 2010 |
| Realization of In0. 75Ga0. 25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction M Akabori, S Hidaka, H Iwase, S Yamada, U Ekenberg Journal of Applied Physics 112 (11), 2012 | 22 | 2012 |
| Formation of AlxGa1− xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE J Takeda, M Akabori, J Motohisa, T Fukui Applied surface science 190 (1-4), 236-241, 2002 | 21 | 2002 |
| Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene T Iwasaki, J Sun, N Kanetake, T Chikuba, M Akabori, M Muruganathan, ... Applied Physics Express 8 (1), 015101, 2014 | 19 | 2014 |
| Dependence on In content of InxGa1− xAs quantum dots grown along GaAs multiatomic steps by MOVPE T Ishihara, S Lee, M Akabori, J Motohisa, T Fukui Journal of crystal growth 237, 1476-1480, 2002 | 18 | 2002 |
| Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates Y Jeong, M Shindo, M Akabori, T Suzuki Applied physics express 1 (2), 021201, 2008 | 16 | 2008 |
| High-quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InxAl1− xSb step-graded buffers T Sato, M Akabori, S Yamada Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 615-619, 2004 | 16 | 2004 |
| Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy M Akabori, J Motohisa, T Fukui Journal of crystal growth 195 (1-4), 579-585, 1998 | 16 | 1998 |
