| Self-heating on bulk FinFET from 14nm down to 7nm node D Jang, E Bury, R Ritzenthaler, MG Bardon, T Chiarella, K Miyaguchi, ... 2015 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2015 | 56 | 2015 |
| Low-frequency noise in junctionless multigate transistors D Jang, JW Lee, CW Lee, JP Colinge, L Montčs, JI Lee, GT Kim, ... Applied Physics Letters 98 (13), 133502, 2011 | 52 | 2011 |
| Device exploration of nanosheet transistors for sub-7-nm technology node D Jang, D Yakimets, G Eneman, P Schuddinck, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 64 (6), 2707-2713, 2017 | 51 | 2017 |
| Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires K Tachi, M Casse, D Jang, C Dupre, A Hubert, N Vulliet, V Maffini-Alvaro, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 46 | 2009 |
| Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstration H Mertens, R Ritzenthaler, V Pena, G Santoro, K Kenis, A Schulze, ... 2017 IEEE International Electron Devices Meeting (IEDM), 37.4. 1-37.4. 4, 2017 | 41 | 2017 |
| Mobility analysis of surface roughness scattering in FinFET devices JW Lee, D Jang, M Mouis, GT Kim, T Chiarella, T Hoffmann, G Ghibaudo Solid-State Electronics 62 (1), 195-201, 2011 | 36 | 2011 |
| Holisitic device exploration for 7nm node P Raghavan, MG Bardon, D Jang, P Schuddinck, D Yakimets, J Ryckaert, ... 2015 IEEE Custom Integrated Circuits Conference (CICC), 1-5, 2015 | 34 | 2015 |
| Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires MG Bardon, Y Sherazi, P Schuddinck, D Jang, D Yakimets, P Debacker, ... 2016 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2016 | 33 | 2016 |
| Nanoneedle transistor-based sensors for the selective detection of intracellular calcium ions D Son, SY Park, B Kim, JT Koh, TH Kim, S An, D Jang, GT Kim, W Jhe, ... ACS nano 5 (5), 3888-3895, 2011 | 30 | 2011 |
| Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors D Jang, JW Lee, K Tachi, L Montes, T Ernst, GT Kim, G Ghibaudo Applied Physics Letters 97 (7), 073505, 2010 | 30 | 2010 |
| Design technology co-optimization for N10 J Ryckaert, P Raghavan, R Baert, MG Bardon, M Dusa, A Mallik, ... Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 1-8, 2014 | 28 | 2014 |
| Layout-induced stress effects in 14nm & 10nm FinFETs and their impact on performance MG Bardon, V Moroz, G Eneman, P Schuddinck, M Dehan, D Yakimets, ... 2013 Symposium on VLSI Technology, T114-T115, 2013 | 28 | 2013 |
| Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors JW Lee, D Jang, GT Kim, M Mouis, G Ghibaudo Journal of Applied Physics 107 (4), 044501, 2010 | 27 | 2010 |
| Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ... IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018 | 25 | 2018 |
| Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017 | 25 | 2017 |
| Dimensioning for power and performance under 10nm: The limits of FinFETs scaling MG Bardon, P Schuddinck, P Raghavan, D Jang, D Yakimets, A Mercha, ... 2015 International Conference on IC Design & Technology (ICICDT), 1-4, 2015 | 22 | 2015 |
| Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactions J Huh, MK Joo, D Jang, JH Lee, GT Kim Journal of Materials Chemistry 22 (45), 24012-24016, 2012 | 20 | 2012 |
| Scaling of BTI reliability in presence of time-zero variability H Kükner, P Weckx, J Franco, M Toledano-Luque, M Cho, B Kaczer, ... 2014 IEEE International Reliability Physics Symposium, CA. 5.1-CA. 5.7, 2014 | 18 | 2014 |
| Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement J Woo Lee, D Jang, M Mouis, K Tachi, G Tae Kim, T Ernst, G Ghibaudo Applied Physics Letters 101 (14), 143502, 2012 | 16 | 2012 |
| Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients J Huh, DC Kim, AM Munshi, DL Dheeraj, D Jang, GT Kim, BO Fimland, ... Nanotechnology 27 (38), 385703, 2016 | 15 | 2016 |
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