David Q. Kelly, Ph.D.
David Q. Kelly, Ph.D.
Syndiant, Inc.
Verified email at syndiant.com
Title
Cited by
Cited by
Year
Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme
HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ...
2007 IEEE Symposium on VLSI Technology, 154-155, 2007
632007
Protein-mediated nanocrystal assembly for flash memory fabrication
S Tang, C Mao, Y Liu, DQ Kelly, SK Banerjee
IEEE transactions on electron devices 54 (3), 433-438, 2007
462007
Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier
Y Liu, S Dey, S Tang, DQ Kelly, J Sarkar, SK Banerjee
IEEE transactions on electron devices 53 (10), 2598-2602, 2006
332006
Improved hot-electron reliability in strained-Si nMOS
D Onsongo, DQ Kelly, S Dey, RL Wise, CR Cleavelin, SK Banerjee
IEEE transactions on electron devices 51 (12), 2193-2199, 2004
302004
Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin step-graded buffer layers for high- III-V metal-oxide …
MM Oye, D Shahrjerdi, I Ok, JB Hurst, SD Lewis, S Dey, DQ Kelly, S Joshi, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
272007
Nanocrystal flash memory fabricated with protein-mediated assembly
S Tang, C Mao, Y Liu, DQ Kelly, SK Banerjee
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
242005
Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications
DQ Kelly, I Wiedmann, JP Donnelly, SV Joshi, S Dey, SK Banerjee, ...
Applied physics letters 88 (15), 152101, 2006
202006
High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node
S Suthram, P Majhi, G Sun, P Kalra, HR Harris, KJ Choi, D Heh, J Oh, ...
2007 IEEE International Electron Devices Meeting, 727-730, 2007
192007
Demonstration of High-Performance PMOSFETs UsingQuantum Wells With High-/Metal-Gate Stacks
P Majhi, P Kalra, R Harris, KJ Choi, D Heh, J Oh, D Kelly, R Choi, BJ Cho, ...
IEEE electron device letters 29 (1), 99-101, 2007
142007
Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon
DI Garcia-Gutierrez, M José-Yacamán, S Lu, DQ Kelly, SK Banerjee
Journal of applied physics 100 (4), 044323, 2006
122006
Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT
J Huang, PD Kirsch, J Oh, SH Lee, J Price, P Majhi, HR Harris, DC Gilmer, ...
2008 Symposium on VLSI Technology, 82-83, 2008
112008
BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates
DQ Kelly, JP Donnelly, S Dey, SV Joshi, DIG Gutiérrez, MJ Yacamán, ...
IEEE electron device letters 27 (4), 265-268, 2006
112006
Thin germanium–carbon layers deposited directly on silicon for metal–oxide–semiconductor devices
DQ Kelly, I Wiedmann, DI Garcia-Gutierrez, M Jose-Yacaman, ...
Semiconductor science and technology 22 (1), S204, 2006
102006
Negative Differential Resistance in Buried-Channel pMOSFETs
ES Liu, DQ Kelly, JP Donnelly, E Tutuc, SK Banerjee
IEEE electron device letters 30 (2), 136-138, 2009
72009
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
J Oh, P Majhi, HH Tseng, R Jammy, DQ Kelly, SK Banerjee, JC Campbell
Thin Solid Films 516 (12), 4107-4110, 2008
72008
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs
DQ Kelly, S Dey, D Onsongo, SK Banerjee
Microelectronics Reliability 45 (7-8), 1033-1040, 2005
72005
High mobility strained Ge PMOFETs with high-k gate dielectric and metal gate on Si substrate
JP Donnelly, DQ Kelly, DI Garcia-Gutierrez, M Jose-Yacaman, ...
Electronics Letters 44 (3), 240-241, 2008
52008
Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition
DQ Kelly
52006
Enhanced hot-electron performance of strained Si NMOS over unstrained Si
DQ Kelly, D Onsongo, S Dey, R Wise, R Cleavelin, SK Banerjee
2004 IEEE International Reliability Physics Symposium. Proceedings, 455-462, 2004
52004
Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs
DQ Kelly, S Lee, P Kalra, R Harris, J Oh, P Kirsch, SK Banerjee, P Majhi, ...
Microelectronic engineering 84 (9-10), 2054-2057, 2007
22007
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