A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs AK Sahoo, S Frégonèse, M Weis, N Malbert, T Zimmer IEEE Transactions on Electron Devices 59 (10), 2619-2625, 2012 | 43 | 2012 |
Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements AK Sahoo, NK Subramani, JC Nallatamby, R Sommet, R Quéré, ... 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 145-148, 2016 | 27 | 2016 |
Characterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurements NK Subramani, AK Sahoo, JC Nallatamby, R Sommet, N Rolland, ... IEEE Transactions on Microwave Theory and Techniques 64 (5), 1351-1358, 2016 | 26 | 2016 |
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism AK Sahoo, NK Subramani, JC Nallatamby, L Sylvain, C Loyez, R Quéré, ... Solid-State Electronics 115, 12-16, 2016 | 26 | 2016 |
Impact of back-end-of-line on thermal impedance in SiGe HBTs AK Sahoo, S Fregonese, M Weiß, C Maneux, N Malbert, T Zimmer 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 23 | 2013 |
Thermal impedance modeling of Si–Ge HBTs from low-frequency small-signal measurements AK Sahoo, S Fregonese, T Zimmer, N Malbert IEEE Electron Device Letters 32 (2), 119-121, 2010 | 23 | 2010 |
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition ADD Dwivedi, A Chakravorty, R D’esposito, AK Sahoo, S Fregonese, ... Solid-State Electronics 115, 1-6, 2016 | 22 | 2016 |
Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation AK Sahoo, S Fregonese, M Weiß, N Malbert, T Zimmer 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 20 | 2011 |
Mutual thermal coupling in SiGe: C HBTs M Weiß, AK Sahoo, C Maneux, S Fregonese, T Zimmer 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013), 1-4, 2013 | 18 | 2013 |
A geometry scalable model for nonlinear thermal impedance of trench isolated HBTs AK Sahoo, S Fregonese, R Desposito, K Aufinger, C Maneux, T Zimmer IEEE Electron Device Letters 36 (1), 56-58, 2014 | 15 | 2014 |
A scalable model for temperature dependent thermal resistance of SiGe HBTs AK Sahoo, S Fregonese, M Weiß, C Maneux, T Zimmer 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 29-32, 2013 | 15 | 2013 |
Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs AK Sahoo, S Fregonese, M Weiß, N Malbert, T Zimmer 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 45-48, 2011 | 14 | 2011 |
Temperature dependent contact and channel sheet resistance extraction of GaN HEMT AK Sahoo, NK Subramani, JC Nallatamby, N Rolland, R Quéré, ... 2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop …, 2015 | 13 | 2015 |
Electro-thermal characterizations, compact modeling and TCAD based device simulations of advanced SiGe: C BiCMOS HBTs and of nanometric CMOS FET AK Sahoo Bordeaux 1, 2012 | 13 | 2012 |
Characterization of intra device mutual thermal coupling in multi finger SiGe: C HBTs M Weiß, AK Sahoo, C Raya, M Santorelli, S Fregonese, C Maneux, ... 2013 IEEE International Conference of Electron Devices and Solid-state …, 2013 | 12 | 2013 |
Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors AK Sahoo, M Weiß, S Fregonese, N Malbert, T Zimmer Solid-state electronics 74, 77-84, 2012 | 11 | 2012 |
Liquid-liquid extraction of Zr (IV) from sulphuric acid medium using tri-n-octyl amine in kerosene J Swain, A Sahoo, BC Bhatta European Journal of Chemistry 9 (3), 222-227, 2018 | 10 | 2018 |
A study on transient intra-device thermal coupling in multifinger SiGe HBTs (Student) R d'Esposito, M Weiss, AK Sahoo, S Fregonese, T Zimmer 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 179-182, 2014 | 10 | 2014 |
80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices M Weiß, S Fregonese, M Santorelli, AK Sahoo, C Maneux, T Zimmer Solid-state electronics 84, 74-82, 2013 | 10 | 2013 |
Optimized ring oscillator with 1.65-ps gate delay in a SiGe: C HBT technology M Weiß, C Majek, AK Sahoo, C Maneux, O Mazouffre, P Chevalier, ... IEEE electron device letters 34 (10), 1214-1216, 2013 | 9 | 2013 |