| GeSn/Ge multiquantum well photodetectors on Si substrates M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ... Optics letters 39 (16), 4711-4714, 2014 | 91 | 2014 |
| Electroluminescence of GeSn/Ge MQW LEDs on Si substrate B Schwartz, M Oehme, K Kostecki, D Widmann, M Gollhofer, R Koerner, ... Optics letters 40 (13), 3209-3212, 2015 | 60 | 2015 |
| Electroluminescence of germanium LEDs on silicon: Influence of antimony doping B Schwartz, A Klossek, M Kittler, M Oehme, E Kasper, J Schulze physica status solidi (c) 11 (11‐12), 1686-1691, 2014 | 24 | 2014 |
| The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically … R Körner, D Schwaiz, IA Fischer, L Augel, S Bechler, L Haenel, M Kern, ... 2016 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2016 | 16 | 2016 |
| Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T Wendav, IA Fischer, M Virgilio, G Capellini, F Oliveira, MF Cerqueira, ... Physical Review B 94 (24), 245304, 2016 | 9 | 2016 |
| Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) B Schwartz, M Oehme, R Koerner, S Bechler, J Schulze, M Kittler Silicon Photonics XII 10108, 60-66, 2017 | 5 | 2017 |
| Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers B Schwartz, P Saring, T Arguirov, M Oehme, K Kostecki, E Kasper, ... Solid State Phenomena 242, 361-367, 2016 | 3 | 2016 |
| Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers B Schwartz, T Arguirov, M Kittler, M Oehme, K Kostecki, E Kasper, ... Silicon Photonics X 9367, 298-305, 2015 | 3 | 2015 |
| Transport of charge carriers along dislocations in Si and Ge M Kittler, M Reiche, B Schwartz, H Uebensee, H Kosina, Z Stanojevic, ... physica status solidi (a) 216 (17), 1900287, 2019 | 2 | 2019 |
| Temperature dependence of luminescence from dislocated ge on si substrate B Schwartz, M Reiche, M Kittler Materials Today: Proceedings 5 (6), 14712-14721, 2018 | 2 | 2018 |
| Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminescence of Ge‐based structures on Si substrate B Schwartz, M Reiche, M Kittler physica status solidi c 14 (7), 1700018, 2017 | 1 | 2017 |
| Modeling, properties, and fabrication of a micromachined thermoelectric generator H Uebensee, M Reiche, H Kosina, X Xu, HS Leipner, G Brokmann, ... AIP Advances 14 (1), 2024 | | 2024 |
| Germanium-Laser für die Silizium-Photonik B Schwartz | | 2019 |
| Die Lumineszenz von Germanium-Strukturen auf Silizium-Substrat BE Schwartz BTU Cottbus-Senftenberg, 2019 | | 2019 |
| Electroluminescence of Germanium-LEDs on Silicon B Schwartz, A Klossek, M Kittler, M Oehme, E Kasper, J Schulze | | 2014 |
| Verbundprojekt: Si-und SiGe-Dünnfilme für thermoelektrische Anwendungen (SiGe-TE), Teilvorhaben 3: Versetzungsnetzwerk in dünnen SOI-Strukturen für Si-basierte … M Kittler, M Krause, V Akhmetov, T Arguirov, D Mankovics, M Trushin, ... Hannover: Technische Informationsbibliothek (TIB), 2013 | | 2013 |
Roman KoernerTRUMPFVerified email at trumpf.com
