| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 574 | 2019 |
| Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung Journal of applied physics 98 (12), 2005 | 541 | 2005 |
| Carbon nanotube membranes with ultrahigh specific adsorption capacity for water desalination and purification HY Yang, ZJ Han, SF Yu, KL Pey, K Ostrikov, R Karnik Nature communications 4 (1), 2220, 2013 | 410 | 2013 |
| Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing KK Ong, KL Pey, PS Lee, ATS Wee, XC Wang, YF Chong Applied physics letters 89 (17), 2006 | 298 | 2006 |
| Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH) YK Chin, KL Pey, N Singh, GQ Lo, LH Tan, G Zhu, X Zhou, XC Wang, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 223 | 2009 |
| A study of thermo-mechanical stress and its impact on through-silicon vias N Ranganathan, K Prasad, N Balasubramanian, KL Pey Journal of micromechanics and microengineering 18 (7), 075018, 2008 | 195 | 2008 |
| Effect of copper TSV annealing on via protrusion for TSV wafer fabrication A Heryanto, WN Putra, A Trigg, S Gao, WS Kwon, FX Che, XF Ang, J Wei, ... Journal of electronic materials 41, 2533-2542, 2012 | 173 | 2012 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 148 | 2021 |
| New salicidation technology with Ni (Pt) alloy for MOSFETs PS Lee, KL Pey, D Mangelinck, J Ding, DZ Chi, L Chan IEEE Electron Device Letters 22 (12), 568-570, 2001 | 130 | 2001 |
| Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance H Wong, KL Pey, L Chan US Patent 5,731,239, 1998 | 117 | 1998 |
| Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ... Applied Physics Letters 83 (11), 2223-2225, 2003 | 113 | 2003 |
| Two-dimensional analytical Mott-Gurney law for a trap-filled solid W Chandra, LK Ang, KL Pey, CM Ng Applied physics letters 90 (15), 2007 | 112 | 2007 |
| The nature of dielectric breakdown X Li, CH Tung, KL Pey Applied Physics Letters 93 (7), 2008 | 108 | 2008 |
| Influence of Bosch etch process on electrical isolation of TSV structures N Ranganathan, DY Lee, L Youhe, GQ Lo, K Prasad, KL Pey IEEE Transactions on components, packaging and manufacturing technology 1 …, 2011 | 104 | 2011 |
| Annealing of ultrashallow junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths YF Chong, KL Pey, ATS Wee, A See, L Chan, YF Lu, WD Song, LH Chua Applied Physics Letters 76 (22), 3197-3199, 2000 | 99 | 2000 |
| Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices KL Pey, SY Siah, YM Lee US Patent 6,025,267, 2000 | 97 | 2000 |
| Vertically arrayed Si nanowire/nanorod-based core-shell pn junction solar cells X Wang, KL Pey, CH Yip, EA Fitzgerald, DA Antoniadis Journal of Applied Physics 108 (12), 2010 | 93 | 2010 |
| Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization CL Gan, CV Thompson, KL Pey, WK Choi, HL Tay, B Yu, ... Applied physics letters 79 (27), 4592-4594, 2001 | 91 | 2001 |
| Micro‐Raman Spectroscopy Investigation of Nickel Silicides and Nickel (Platinum) Silicides PS Lee, D Mangelinck, KL Pey, ZX Shen, J Ding, T Osipowicz, A See Electrochemical and Solid-State Letters 3 (3), 153, 2000 | 91 | 2000 |
| Intrinsic nanofilamentation in resistive switching X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ... Journal of Applied Physics 113 (11), 2013 | 86 | 2013 |
