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Hamzeh Alaibakhsh
Hamzeh Alaibakhsh
School of Electrical Engineering, Iran University of Science and Technology
Verified email at elec.iust.ac.ir
Title
Cited by
Cited by
Year
Practical optimization of highly sensitive azo photoconductor with circular electrode scheme
SS Mousavi, B Sajad, B Efafi, H Alaibakhsh, KE Jahromi, MH Majlesara, ...
Journal of Lightwave Technology 36 (24), 5800-5806, 2018
132018
Analytical modeling of pinning process in pinned photodiodes
H Alaibakhsh, MA Karami
IEEE transactions on electron devices 65 (10), 4362-4368, 2018
112018
A new analytical pinned photodiode capacitance model
H Alaibakhsh, MA Karami
IEEE Electron Device Letters 39 (3), 379-382, 2018
92018
Electrical Crosstalk Analysis in a Pinned Photodiode CMOS Image Sensor
M Khabir, H Alaibakhsh, MA Karami
Applied Optics 60 (30), 2021
52021
A general compact pinned photodiode model capable of miniature PPD modeling
H Alaibakhsh, MA Karami
IEEE transactions on electron devices 68 (6), 2785-2790, 2021
42021
A 3-D device-level investigation of a lag-free PPD pixel with a capacitive deep trench isolation as shared vertical transfer gate
H Alaibakhsh, MA Karami
IEEE Transactions on Electron Devices 65 (10), 4381-4386, 2018
42018
A simulation study of electric field engineering with multi-level pinned photodiodes for fast and complete charge transfer
H Alaibakhsh, M Khabir, MA Karami
Optik 260, 169054, 2022
32022
Optical modeling of sunlight by using partially coherent sources in organic solar cells
H Alaibakhsh, G Darvish
Applied Optics 55 (7), 1808-1813, 2016
32016
A shared transfer gate 2T pixel
H Alaibakhsh, MA Karami
2017 IEEE 4th International Conference on Knowledge-Based Engineering and …, 2017
22017
Numerical study of a Fresnel zone plate based lens for a 2μm×2μm CMOS image sensor pixel
H Alaibakhsh, MA Karami
Optik - International Journal for Light and Electron Optics 127 (17), 6867-6873, 2016
22016
3D device‐level simulation of charge separation from sidewall in vertical transfer gate pinned photodiode pixels for noise mitigation
S Heidari, H Alaibakhsh, M Azim Karami
IET Circuits, Devices & Systems 14 (5), 619-622, 2020
12020
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