| Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell IEEE Electron Device Letters 39 (4), 520-523, 2018 | 111 | 2018 |
| A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges M Monavarian, A Rashidi, D Feezell physica status solidi (a) 216 (1), 1800628, 2019 | 104 | 2019 |
| High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ... IEEE Photonics Technology Letters 29 (4), 381-384, 2017 | 76 | 2017 |
| Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ... Applied Physics Letters 112 (4), 2018 | 70 | 2018 |
| Zero-phonon line and fine structure of the yellow luminescence band in GaN MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ... Physical Review B 94 (3), 035201, 2016 | 64 | 2016 |
| Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors SM Mishkat-Ul-Masabih, AA Aragon, M Monavarian, TS Luk, DF Feezell Applied Physics Express 12 (3), 036504, 2019 | 63 | 2019 |
| Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ... Journal of Applied Physics 122 (3), 2017 | 61 | 2017 |
| Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ... Acs Photonics 6 (7), 1618-1625, 2019 | 56 | 2019 |
| Determination of carrier diffusion length in GaN S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ... Journal of Applied Physics 117 (1), 2015 | 47 | 2015 |
| Thermal quenching of the yellow luminescence in GaN MA Reshchikov, NM Albarakati, M Monavarian, V Avrutin, H Morkoç Journal of Applied Physics 123 (16), 2018 | 44 | 2018 |
| Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ... Applied Physics Letters 112 (4), 2018 | 42 | 2018 |
| Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ... Optics express 25 (16), 19343-19353, 2017 | 40 | 2017 |
| Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics G Lheureux, M Monavarian, R Anderson, RA DeCrescent, J Bellessa, ... Optics Express 28 (12), 17934-17943, 2020 | 36 | 2020 |
| Trade-off between bandwidth and efficiency in semipolar (202¯ 1¯) InGaN/GaN single-and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ... Applied Physics Letters 112 (19), 2018 | 33 | 2018 |
| High-Voltage Regrown Nonpolar -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches M Monavarian, G Pickrell, AA Aragon, I Stricklin, MH Crawford, ... IEEE Electron Device Letters 40 (3), 387-390, 2019 | 31 | 2019 |
| Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells D Rosales, B Gil, T Bretagnon, B Guizal, F Zhang, S Okur, M Monavarian, ... Journal of Applied Physics 115 (7), 2014 | 27 | 2014 |
| Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements A Rashidi, M Monavarian, A Aragon, D Feezell Scientific Reports 9 (1), 19921, 2019 | 24 | 2019 |
| Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire MB Ullah, V Avrutin, SQ Li, S Das, M Monavarian, M Toporkov, Ü Özgür, ... physica status solidi (RRL)–Rapid Research Letters 10 (9), 682-686, 2016 | 21 | 2016 |
| Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers F Zhang, N Can, S Hafiz, M Monavarian, S Das, V Avrutin, Ü Özgür, ... Applied Physics Letters 106 (18), 2015 | 19 | 2015 |
| Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder KS Qwah, M Monavarian, G Lheureux, J Wang, YR Wu, JS Speck Applied Physics Letters 117 (2), 2020 | 18 | 2020 |
Daniel FeezellUniversity of New MexicoVerified email at unm.edu
