Christoph Adelmann
Christoph Adelmann
Verified email at imec.be - Homepage
Title
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Cited by
Year
Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
X Lou, C Adelmann, SA Crooker, ES Garlid, J Zhang, KSM Reddy, ...
Nature Physics 3 (3), 197-202, 2007
8672007
Imaging spin transport in lateral ferromagnet/semiconductor structures
SA Crooker, M Furis, X Lou, C Adelmann, DL Smith, CJ Palmstrøm, ...
Science 309 (5744), 2191-2195, 2005
3982005
Electrical detection of spin accumulation at a ferromagnet-semiconductor interface
X Lou, C Adelmann, M Furis, SA Crooker, CJ Palmstrøm, PA Crowell
Physical review letters 96 (17), 176603, 2006
2412006
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
J Simon, NT Pelekanos, C Adelmann, E Martínez-Guerrero, R André, ...
Physical Review B 68 (3), 035312, 2003
2142003
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2132009
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 072006, 2015
1992015
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
C Adelmann, J Brault, D Jalabert, P Gentile, H Mariette, G Mula, B Daudin
Journal of Applied Physics 91 (12), 9638-9645, 2002
1962002
Spin injection and relaxation in ferromagnet-semiconductor heterostructures
C Adelmann, X Lou, J Strand, CJ Palmstrøm, PA Crowell
Physical Review B 71 (12), 121301, 2005
1882005
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
C Adelmann, J Simon, G Feuillet, NT Pelekanos, B Daudin, G Fishman
Applied Physics Letters 76 (12), 1570-1572, 2000
1822000
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ...
Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014
1762014
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
G Mula, C Adelmann, S Moehl, J Oullier, B Daudin
Physical Review B 64 (19), 195406, 2001
1672001
Spin injection from the Heusler alloy into heterostructures
XY Dong, C Adelmann, JQ Xie, CJ Palmstrøm, X Lou, J Strand, ...
Applied Physics Letters 86 (10), 102107, 2005
1632005
Gallium adsorption on (0001) GaN surfaces
C Adelmann, J Brault, G Mula, B Daudin, L Lymperakis, J Neugebauer
Physical Review B 67 (16), 165419, 2003
1612003
Ferroelectricity in Gd-doped HfO2 thin films
S Mueller, C Adelmann, A Singh, S Van Elshocht, U Schroeder, ...
ECS Journal of Solid State Science and Technology 1 (6), N123, 2012
1472012
Shape memory and ferromagnetic shape memory effects in single-crystal thin films
JW Dong, JQ Xie, J Lu, C Adelmann, CJ Palmstrøm, J Cui, Q Pan, ...
Journal of applied physics 95 (5), 2593-2600, 2004
1342004
Strain relaxation in (0001) AlN/GaN heterostructures
A Bourret, C Adelmann, B Daudin, JL Rouviere, G Feuillet, G Mula
Physical Review B 63 (24), 245307, 2001
1202001
Experimental prototype of a spin-wave majority gate
T Fischer, M Kewenig, DA Bozhko, AA Serga, II Syvorotka, F Ciubotaru, ...
Applied Physics Letters 110 (15), 152401, 2017
1082017
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy
E Martínez-Guerrero, C Adelmann, F Chabuel, J Simon, NT Pelekanos, ...
Applied Physics Letters 77 (6), 809-811, 2000
1062000
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 092906, 2014
1052014
Growth and optical properties of GaN/AlN quantum wells
C Adelmann, E Sarigiannidou, D Jalabert, Y Hori, JL Rouviere, B Daudin, ...
Applied physics letters 82 (23), 4154-4156, 2003
982003
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