Guoli Li
Guoli Li
Associate Professor at Hunan University, PhD from Université catholique de Louvain
Verified email at
Cited by
Cited by
Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu (In, Ga) Se2 solar cell performances using SCAPS 1-D model
R Kotipalli, O Poncelet, G Li, Y Zeng, LA Francis, B Vermang, D Flandre
Solar Energy 157, 603-613, 2017
Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance
LL Da Wan, Xingqiang Liu, Ablat Abliz, Chuansheng Liu, Yanbing Yang , Wei Wu ...
IEEE Transactions on Electron Devices 65 (3), 1018-1022, 2018
Analysis and simulation for current–voltage models of thin-film gated SOI lateral PIN photodetectors
G Li, Y Zeng, W Hu, Y Xia
Optik 125 (1), 540-544, 2014
Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In2O3 Thin‐Film Transistor
J He, G Li, Y Lv, C Wang, C Liu, J Li, D Flandre, H Chen, T Guo, L Liao
Advanced Electronic Materials 5 (6), 1900125, 2019
Silicon-on-insulator photodiode on micro-hotplate platform with improved responsivity and high-temperature application
G Li, N André, O Poncelet, P Gérard, SZ Ali, F Udrea, LA Francis, Y Zeng, ...
IEEE Sensors Journal 16 (9), 3017-3024, 2016
Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation
Y Hou, L Wang, X Zou, D Wan, C Liu, G Li, X Liu, Y Liu, C Jiang, JC Ho, ...
Small 16 (5), 1905609, 2020
Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors
G Li, A Abliz, L Xu, N André, X Liu, Y Zeng, D Flandre, L Liao
Applied Physics Letters 112 (25), 253504, 2018
Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors
LL Da Wan, Ablat Abliz, Meng Su, Chuangsheng Liu, Changzhong Jiang, Guoli Li ...
IEEE Electron Device Letters 38 (11), 1540-1542, 2017
Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode
G Li, N André, B Huet, T Delhaye, N Reckinger, LA Francis, L Liao, ...
Journal of Physics D: Applied Physics 52 (24), 245101, 2019
Multiple-wavelength detection in SOI lateral PIN diodes with backside reflectors
G Li, N André, P Gérard, SZ Ali, F Udrea, LA Francis, Y Zeng, D Flandre
IEEE Transactions on Industrial Electronics 64 (9), 7368-7376, 2017
Leakage current and low-frequency noise analysis and reduction in a suspended SOI lateral pin diode
G Li, V Kilchytska, N André, LA Francis, Y Zeng, D Flandre
IEEE Transactions on Electron Devices 64 (10), 4252-4259, 2017
Operation of suspended lateral SOI PIN photodiode with aluminum back gate
G Li, N Andre, O Poncelet, P Gerard, SZ Ali, F Udrea, LA Francis, Y Zeng, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector
X Chen, B Jiang, D Wang, G Li, H Wang, H Wang, F Wang, P Wang, ...
Applied Physics Letters 118 (4), 041102, 2021
Wide band study of silicon-on-insulator photodiodes on suspended micro-hotplates platforms
N André, G Li, P Gérard, O Poncelet, Y Zeng, SZ Ali, F Udrea, LA Francis, ...
2015 International Conference on IC Design & Technology (ICICDT), 1-4, 2015
Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation
G Li, Y Zeng, W Zou, Y Xia
Optik 125 (21), 6483-6487, 2014
Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In 2 O 3 thin film transistors
H Wang, J He, Y Xu, N André, Y Zeng, D Flandre, L Liao, G Li
Physical Chemistry Chemical Physics 22 (3), 1591-1597, 2020
Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime
Y Xia, G Li, B Jiang, Z Yang, X Liu, X Xiao, D Flandre, C Wang, Y Liu, ...
Nanoscale 11 (21), 10420-10428, 2019
Modeling and electrical simulations of thin-film gated SOI lateral PIN photodetectors for high sensitivity and speed performances
G Li, Y Zeng, W Hu, Y Xia, W Peng
CCF National Conference on Compujter Engineering and Technology, 235-243, 2013
High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping
D Wan, B Jiang, H Huang, C Chen, A Abliz, C Ye, X Liu, X Zou, G Li, ...
IEEE Electron Device Letters 41 (6), 944-947, 2020
Sensors and Sensor Systems for Harsh Environment Applications
A De Luca, F Udrea, G Li, Y Zeng, N André, G Pollissard-Quatremère, ...
Semiconductor Devices in Harsh Conditions, 87, 2016
The system can't perform the operation now. Try again later.
Articles 1–20