Philippe Matagne
Philippe Matagne
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Analysis of graphene nanoribbons as a channel material for field-effect transistors
B Obradovic, R Kotlyar, F Heinz, P Matagne, T Rakshit, MD Giles, ...
Applied Physics Letters 88 (14), 142102, 2006
Physics of hole transport in strained silicon MOSFET inversion layers
EX Wang, P Matagne, L Shifren, B Obradovic, R Kotlyar, S Cea, M Stettler, ...
IEEE Transactions on Electron Devices 53 (8), 1840-1851, 2006
Assessment of room-temperature phonon-limited mobility in gated silicon nanowires
R Kotlyar, B Obradovic, P Matagne, M Stettler, MD Giles
Applied Physics Letters 84 (25), 5270-5272, 2004
Shell charging and spin-filling sequences in realistic vertical quantum dots
P Matagne, JP Leburton, DG Austing, S Tarucha
Physical Review B 65 (8), 085325, 2002
Understanding stress enhanced performance in Intel 90nm CMOS technology
MD Giles, M Armstrong, C Auth, SM Cea, T Ghani, T Hoffmann, R Kotlyar, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 118-119, 2004
Shell-filling effects and Coulomb degeneracy in planar quantum-dot structures
S Nagaraja, P Matagne, VY Thean, JP Leburton, YH Kim, RM Martin
Physical Review B 56 (24), 15752, 1997
Inversion mobility and gate leakage in high-k/metal gate MOSFETs
R Kotlyar, MD Giles, P Matagne, B Obradovic, L Shifren, M Stettler, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Drive current enhancement in -type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
L Shifren, X Wang, P Matagne, B Obradovic, C Auth, S Cea, T Ghani, J He, ...
Applied physics letters 85 (25), 6188-6190, 2004
Three-dimensional analysis of the electronic structure of cylindrical vertical quantum dots
P Matagne, JP Leburton
Physical Review B 65 (23), 235323, 2002
Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress
E Wang, P Matagne, L Shifren, B Obradovic, R Kotlyar, S Cea, J He, Z Ma, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
A physically-based analytic model for stress-induced hole mobility enhancement
B Obradovic, P Matagne, L Shifren, E Wang, M Stettler, J He, MD Giles
Journal of Computational Electronics 3 (3-4), 161-164, 2004
Front end stress modeling for advanced logic technologies
SM Cea, M Armstrong, C Auth, T Ghani, MD Giles, T Hoffmann, R Kotlyar, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
J Kavalieros, JK Brask, ML Doczy, MV Metz, S Datta, BS Doyle, RS Chau, ...
US Patent 7,470,972, 2008
Single-electron charging and detection in a laterally coupled quantum-dot circuit in the few-electron regime
LX Zhang, P Matagne, JP Leburton, R Hanson, LP Kouwenhoven
Physical Review B 69 (24), 245301, 2004
Modeling of the electronic properties of vertical quantum dots by the finite element method
P Matagne, JP Leburton, J Destine, G Cantraine
CMES-Computer Modeling in Engineering and Sciences 1 (1), X-10, 2000
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
A Veloso, B Parvais, P Matagne, E Simoen, T Huynh-Bao, V Paraschiv, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
A Veloso, G Hellings, MJ Cho, E Simoen, K Devriendt, V Paraschiv, ...
2015 Symposium on VLSI Technology (VLSI Technology), T138-T139, 2015
Spin configurations in circular and rectangular vertical quantum dots in a magnetic field: Three-dimensional self-consistent simulations
DV Melnikov, P Matagne, JP Leburton, DG Austing, G Yu, S Tarucha, ...
Physical Review B 72 (8), 085331, 2005
Modeling of via resistance for advanced technology nodes
I Ciofi, PJ Roussel, Y Saad, V Moroz, CY Hu, R Baert, K Croes, A Contino, ...
IEEE Transactions on Electron Devices 64 (5), 2306-2313, 2017
Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance
A Veloso, A De Keersgieter, P Matagne, N Horiguchi, N Collaert
Materials Science in Semiconductor Processing 62, 2-12, 2017
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