Nan Ma
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Charge scattering and mobility in atomically thin semiconductors
N Ma, D Jena
Physical Review X 4 (1), 011043, 2014
Intrinsic electron mobility limits in β-Ga2O3
N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena
Applied Physics Letters 109 (21), 212101, 2016
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ...
Nano letters 15 (9), 5791-5798, 2015
Exfoliated multilayer MoTe2 field-effect transistors
S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ...
Applied Physics Letters 105 (19), 192101, 2014
High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy
X Wang, S Liu, N Ma, L Feng, G Chen, F Xu, N Tang, S Huang, KJ Chen, ...
Applied Physics Express 5 (1), 015502, 2012
Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
N Ma, D Jena
2D Materials 2 (1), 015003, 2015
Interband tunneling in two-dimensional crystal semiconductors
N Ma, D Jena
Applied Physics Letters 102 (13), 132102, 2013
Hole mobility in wurtzite InN
N Ma, XQ Wang, ST Liu, G Chen, JH Pan, L Feng, FJ Xu, N Tang, B Shen
Applied Physics Letters 98 (19), 192114, 2011
Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of -type conduction
N Ma, XQ Wang, FJ Xu, N Tang, B Shen, Y Ishitani, A Yoshikawa
Applied Physics Letters 97 (22), 222114, 2010
Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on treated -type GaN
F Lin, B Shen, S Huang, FJ Xu, L Lu, J Song, FH Mei, N Ma, ZX Qin, ...
Journal of Applied Physics 105 (9), 093702, 2009
Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers
N Ma, B Shen, FJ Xu, LW Lu, ZH Feng, ZG Zhang, SB Dun, CP Wen, ...
Applied Physics Letters 96 (24), 242104, 2010
The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0. 245Ga0. 755N/GaN heterostructure and Ni/Au Schottky contact
L Fang, W Tao, S Bo, H Sen, L Fang, M Nan, X Fu-Jun, W Peng, ...
Chinese Physics B 18 (4), 1614, 2009
Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts
L Fang, W Tao, S Bo, H Sen, L Fang, M Nan, X Fu-Jun, W Peng, ...
Chinese Physics B 18 (4), 1618, 2009
Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements
N Ma, XQ Wang, ST Liu, L Feng, G Chen, FJ Xu, N Tang, LW Lu, B Shen
Applied Physics Letters 99 (18), 182107, 2011
Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
ZY Chen, HT Yuan, XQ Wang, N Ma, YW Zhang, H Shimotani, ZX Qin, ...
Applied Physics Letters 103 (25), 253508, 2013
Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN
N Ma, B Shen, LW Lu, FJ Xu, L Guo, XQ Wang, F Lin, ZH Feng, SB Dun, ...
Applied Physics Letters 100 (5), 052109, 2012
Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures
L Fang, S Bo, L Li-Wu, L Xin-Yu, W Ke, X Fu-Jun, W Yan, M Nan, H Jun
Chinese Physics B 20 (7), 077303, 2011
Ni diffusion and its influence on electrical properties of heterostructures
S Huang, B Shen, F Lin, N Ma, FJ Xu, ZL Miao, J Song, L Lu, F Liu, ...
Applied Physics Letters 93 (17), 172102, 2008
Electron transport in 2D crystal semiconductors and their device applications
D Jena, M Li, N Ma, WS Hwang, D Esseni, A Seabaugh, HG Xing
2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014
Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1− x N/GaN heterostructures at high temperatures
F Lin, B Shen, LW Lu, N Ma, FJ Xu, ZL Miao, J Song, XY Liu, K Wei, ...
Chinese Physics B 19 (12), 127304, 2010
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